BCW69 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP general purpose transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW69
BCW70
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BCW69 = H1
BCW70 = H2
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
D.C. current gain at T_j = 25 °C
–I_C = 2 mA; –V_CE ⁼ 5 V
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation up to T_amb = 25 °C
Junction temperature
Transition frequency at f = 35 MHz
–I_C = 10 mA; –V_CE = 5 V
Noise figure at R_S = 2 kΩ
–I_C = 200 µA; –V_CE ⁼ 5 V;
f = 1 kHz; B = 200 Hz
BCW69
>
120
h_FE <
260
–V_CB0 max.
–V_CE0 max.
–I_CM max.
P_tot max.
T_j
max.
BCW70
215
500
50
V
45
V
200
mA
250
mW
150
°C
f_T
typ.
150
MHz
F
<
10
dB
Continental Device India Limited
Data Sheet
Page 1 of 4