BCW67 Datasheet, PDF (1/3 Pages) Infineon Technologies AG – PNP Silicon AF Transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW67, A, B, C
BCW68, F, G, H
GENERAL PURPOSE TRANSISTOR
P–N–P transistor
Marking
BCW67A = DA
BCW67B = DB
BCW67C = DC
BCW68F = DF
BCW68G = DG
BCW68H = DH
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation at T_amb = 25°C
D.C. current gain
I_C = 10 mA; V_CE = 1 V
BCW67A, 68F
BCW67B, 68G
BCW67C, 68H
I_C = 100 mA; V_CE = 1 V
BCW67A, 68F
BCW67B, 68G
–V_CBO
–V_CEO
–V_EBO
–I_C
P_tot
h_FE
h_FE
h_FE
h_FE
h_FE
BCW 67series 68 series
max. 45
60 V
max. 32
45 V
max.
5
V
max.
800
mA
max
225
mW
min.
75
min.
120
min.
180
min.
100
max.
250
min.
160
max.
400
Continental Device India Limited
Data Sheet
Page 1 of 3