BCW61A Datasheet, PDF (1/3 Pages) Samsung semiconductor – PNP EPITAXIAL SILICON TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW61A BCW61B
BCW61C BCW61D
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P silicon transistors
Marking
BCW61A = BA
BCW61B = BB
BCW61C = BC
BCW61D = BD
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (V_BE = 0)
Collector–emitter voltage (open base)
Collector current (d.c.)
Total power dissipation
Junction temperature
Transition frequency at f: 100 MHz
–V_CE = 5 V; –I_C = 10 mA
Noise figure at f = 1 kHz
–V_CE = 5 V; –I_C = 200 mA
–V_CES
–V_CEO
–I_C
P_tot
T_j
max.
max.
max.
max.
max.
32 V
32 V
200 mA
250 mW
150 °C
f_T
typ. 180 MHz
F
typ.
2 dB
Continental Device India Limited
Data Sheet
Page 1 of 3