BCW29 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP general purpose transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
BCW29
BCW30
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BCW29 = C1
BCW30 = C2
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
D.C. current gain at T_j = 25 °C
–I_C = 2 mA; –V_CE = 5 V
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation up to T_amb = 25 °C
Junction temperature
Transition frequency at f = 35 MHz
–I_C = 10 mA; –V_CE = 5 V
Noise figure at R_S = 2 kW
–I_c = 200 mA; –V_CE = 5 V;
f = 1 kHz; B = 200 Hz
h_FE
–V_CB0
–V_CE0
–I_CM
P_tot
T_j
BCW29
>
120
<
260
max.
max.
max.
max,
max.
BCW30
215
500
32
V
32
V
200
mA
250
mW
150
°C
f_T
typ.
150
MHz
F
<
10
dB
Continental Device India Limited
Data Sheet
Page 1 of 3