BCP54 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN medium power transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BCP54 BCP55 BCP56
SOT-223
Formed SMD Package
General Purpose Medium Power DC Applications
Complementary BCP51 BCP52 and BCP53
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
BCP54 BCP55
Collector Base Voltage
V_CBO
45
60
Collector Emitter Voltage
V_CEO
45
60
Emitter Base Voltage
V_EBO
5.0
Collector Current (DC)
I_C
1.0
Collector Current Peak
I_CM
1.5
Base Current Peak
I_BM
0.2
Power Dissipation upto T_amb=25ºC
*P_D
1.33
Storage Temperature
T_stg
- 65 to +150
Junction Temperature
T_j
150
Operating Ambient Temperature
T_amb
- 65 to +150
BCP56
100
80
UNITS
V
V
V
A
A
A
W
ºC
ºC
ºC
THERMAL RESISTANCE
From junction to ambient
*R_{th (j-a)}
94
From junction to soldering point
R_{th (j-a)}
13
K/W
K/W
* Device Mounted on printed circuit board, single sided copper, tinplated, mounting pad for collector 1 cm².
ABSOLUTE MAXIMUM RATINGS (T_amb=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut Off Current
I_CBO
V_CB=30V, I_E=0
V_CB=30V, I_E=0, T_j=125ºC
Emitter Cut Off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
h_FE
I_C=5mA, V_CE=2V
I_C=150mA, V_CE=2V
I_C=500mA, V_CE=2V
DC Current Gain
h_FE
I_C=150mA, V_CE=2V
Group -10
Group -16
Collector Emitter Saturation Voltage
V_{CE (sat)}
I_C=0.5A, I_B=50mA
Base Emitter On Voltage
V_{BE (on)}
I_C=0.5A, V_CE=2V
Transition Frequency
f_T
I_C=10mA, V_CE=5V,f=100MHz
DC Current Gain Ratio of the
Complementary Pairs
h_FE1/h_FE2
I_C=150mA, V_CE=2V
BCP54_56Rev011104E
Continental Device India Limited
Data Sheet
MIN TYP MAX UNITS
100 nA
10
µA
100 nA
63
63
250
40
63
160
100
250
0.5
1.0
130
1.6
V
V
MHz
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