BC856 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP general purpose transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BC856 BC857
BC858
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BC856 = 3D
BC856A = 3A
BC856B = 3B
BC857 = 3H
BC857A = 3E
BC857B = 3F
BC857C = 3G
BC858 = 3M
BC858A = 3J
BC858B = 3K
BC858C = 3L
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (+V_BE = 1 V)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation
up to T_amb = 60 °C
Junction temperature
Small–signal current gain
–I_C = 2 mA; –V_CE = 5 V; f = 1 kHz
Transition frequency at f = 100 MHz
–I_C = 10 mA; –V_CE = 5 V
Noise figure at R_S = 2 kW
–I_C = 200 mA; –V_CE = 5 V
f = 1 kHz; B = 200 Hz
BC856 BC857 BC858
–V_CEX max. 80
–V_CE0 max. 65
–I_CM max.
50 30 V
45 30 V
200
mA
P_tot max.
T_j
max.
250
mW
150
°C
h_fe
75 to 900
f_T
>
100
MHz
F
<
10
dB
Continental Device India Limited
Data Sheet
Page 1 of 3