BC807 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP general purpose transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BC807
BC808
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistor
Marking
BC807 = 5D
BC807–16 = 5A
BC807–25 = 5B
BC807-40 = 5C
BC808 = 5H
BC808–16 = 5E
BC808–25 = 5F
BC808–40 = 5G
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (V_BE = 0)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation up to T_amb = 25 °C
Junction temperature
Transition frequency at f = 100 MHz
–I_C = 10 mA; –V_CE = 5 V
–V_CES
–V_CE0
–I_CM
P_tot
T_j
BC807
max. 50
max. 45
max.
max.
max.
1000
250
150
BC808
30 V
25 V
mA
mW
°C
f_T
>
80
MHz
Continental Device India Limited
Data Sheet
Page 1 of 4