BC635 Datasheet, PDF (1/5 Pages) Motorola, Inc – High Current Transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
BC635, 637, 639 NPN
BC636, 638, 640 PNP
TO-92
Plastic Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
ECB
High Current Transistor
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation at T_a=25ºC
Derate Above 25ºC
Total Device Dissipation at T_a=25ºC
Total Device Dissipation at T_c=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
V_CEO
V_CBO
V_EBO
I_C
P_D
**P_D
P_D
T_j, T_stg
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Junction to Ambient
R_{th (j-c)}
R_{th (j-a)}
**R_{th (j-a)}
BC635
BC636
45
45
BC637
BC638
60
60
5.0
1.0
800
6.4
1.0
2.75
22
- 55 to +150
BC639
BC640
80
80
45
156
125
UNIT
V
V
V
A
mW
mW/ºC
W
W
mW/ºC
ºC
ºC/W
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
BC635/BC636 45
BC637/BC638 60
BC639/BC640 80
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0
BC635/BC636 45
BC637/BC638 60
BC639/BC640 80
Emitter Base Voltage
V_EBO
I_E=10µA, I_C=0
5.0
Collector Cut Off Current
I_CBO
V_CB=30V, I_E=0
V_CB=30V, I_E=0, T_a=125ºC
Base Emitter (On) Voltage
*V_{BE (on)}
I_C=500mA, V_CE=2V
Collector Emitter Saturation Voltage *V_{CE (sat)}
I_C=500mA, I_B=50mA
MAX
0.1
10
1.0
0.5
UNIT
V
V
V
V
V
V
V
µA
µA
V
V
*Pulse Test: Pulse Width < 300µs, Duty Cycle 2%
**Transistors mounted on printed circuit board, max Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm
BC635_BC640Rev_4 030106E
Continental Device India Limited
Data Sheet
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