BC556 Datasheet, PDF (1/5 Pages) Motorola, Inc – Amplifier Transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
CB ^E
BC556, A, B,
BC557, A, B, C
BC558, A, B, C
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CEO
Collector Emitter Voltage
V_CES
Collector Base Voltage
V_CBO
Emitter Base Voltage
V_EBO
Collector Current Continuous
I_C
Collector Current Peak
I_CM
Base Current Peak
I_BM
Emitter Current Peak
I_EM
Power Dissipation at T_a=25ºC
P_D
Derate Above 25ºC
Storage Temperature
T_stg
Junction Temperature
T_j
BC556
65
80
80
BC557
45
50
50
5
100
200
200
200
500
4.0
- 65 to +150
150
BC558
30
30
30
THERMAL RESISTANCE
Junction to Ambient in free air
R_{th (j-a)}
250
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
V_CEO
I_C=2mA, I_B=0
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0
Emitter Base Voltage
V_EBO
I_E=100µA, I_C=0
Collector Cut Off Current
I_CBO
V_CB=30V, I_E=0 ALL
V_CB=30V, I_E=0, Tj=150ºC ALL
Collector Cut Off Current
I_CES
V_CE=80V, V_BE=0
V_CE=50V, V_BE=0
V_CE=30V, V_BE=0
V_CE=80V, V_EB=0, T_j=125ºC
V_CE=50V, V_EB=0, T_j=125ºC
V_CE=30V, V_EB=0, T_j=125ºC
BC556
>65
>80
<15
<4.0
BC557
>45
>50
>5.0
<15
<5.0
<15
<4.0
BC558
>30
>30
<15
<4.0
UNITS
V
V
V
V
mA
mA
mA
mA
mW
mW/ºC
ºC
ºC
ºC/W
UNITS
V
V
V
nA
µA
nA
nA
nA
µA
µA
µA
BC556_558Rev_2 201205E
Continental Device India Limited
Data Sheet
Page 1 of 5