BC549 Datasheet, PDF (1/5 Pages) NXP Semiconductors – NPN general purpose transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CB ^E
BC549,A.B,C
BC550,A,B,C
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
Low Noise Transistors
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CEO
Collector Base Voltage
V_CBO
Emitter Base Voltage
V_EBO
Collector Current Continuous
I_C
Power Dissipation at T_a=25ºC
P_D
Derate Above 25ºC
Power Dissipation at T_c=25ºC
P_D
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
T_j, T_stg
BC549
30
30
5.0
100
625
5.0
1.5
12
- 55 to +150
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
R_{th (j-c)}
R_{th (j-a)}
83.3
200
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
SYMBOL
TEST CONDITION
MIN
V_CEO
I_C=1mA, I_B=0
BC549
30
Collector Base Voltage
BC550
45
V_CBO
I_C=100µA, I_E=0
BC549
30
Emitter Base Voltage
BC550
50
V_EBO
I_E=10µA, I_C=0
5.0
Collector Cut Off Current
Emitter Cut Off Current
I_CBO
V_CB=30V, I_E=0
V_CB=30V, I_E=0, T_a= +125ºC
I_EBO
V_EB=4V, I_C=0
BC549_550Rev_1 081205E
BC550
45
50
TYP MAX
15
5.0
15
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
V
V
nA
µA
nA
Continental Device India Limited
Data Sheet
Page 1 of 5