BC485 Datasheet, PDF (1/5 Pages) Micro Electronics – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC485, A, B, L
BC487, A, B, L
BC489, A, B, L
TO-92
Plastic Package
CB ^E
High Current Transistors
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation at T_a=25ºC
V_CEO
V_CBO
V_EBO
I_C
P_D
Derate Above 25ºC
Power Dissipation at T_c=25ºC
P_D
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
T_J, T_stg
BC485
45
45
BC487
60
60
5.0
1.0
625
5.0
1,5
12
- 55 to +150
BC489
80
80
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
R_{th (j-c)}
R_{th (j-a)}
83.3
200
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
DC Current Gain
V_CEO
V_CBO
V_EBO
I_CBO
h_FE
I_C=1mA, I_B=0
I_C=100µA, I_E=0
I_E=10µA, I_C=0
V_CB=30V, I_E=0 BC485
V_CB=40V, I_E=0 BC487
V_CB=60V, I_E=0, BC489
I_C=10mA, V_CE=2V
I_C=100mA, V_CE=2V
BC485/487/489
BC485L/487L/489L
BC485A/487A/489A
Collector Emitter Saturation Voltage V_{CE (sat)}
Base Emitter Saturation Voltage
V_{BE (sat)}
BC485B/487B/489B
*I_C=1A, V_CE=5V
I_C=500mA, I_B=50mA
*I_C=1A, I_B=100mA
I_C=500mA, I_B=50mA
*I_C=1A, I_B=100mA
BC485
>45
>45
BC487
>60
>60
>5.0
<100
<100
<100
>40
BC489
>80
>80
60 - 400
60 - 150
100 - 250
160 - 400
>15
<0.50
TYP 0.30
<1.2
TYP 0.9
*Pulse test:- Pulse Width =300µs, Duty Cycle 2%
BC487_489Rev_1 280306E
UNITS
V
V
V
A
W
mW/ºC
mW
mW/ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
nA
nA
nA
V
V
V
V
Continental Device India Limited
Data Sheet
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