BC413 Datasheet, PDF (1/5 Pages) Micro Electronics – SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC413, B, C
BC414, B, C
TO-92
Plastic Package
CB ^E
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation at T_a=25ºC
Derate Above 25ºC
Power Dissipation at T_c=25ºC
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
T_J, T_stg
BC413
30
45
5.0
100
350
2.8
1.0
8.0
- 55 to +150
BC414
45
50
THERMAL RESISTANCE
Junction to Case
R_{th (j-c)}
125
Junction to Ambient in free air
R_{th (j-a)}
357
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
V_CBO
V_EBO
I_CBO
I_C=10µA, I_E=0
I_E=10µA, I_C=0
V_CB=30V, I_E=0
V_CB=30V, I_E=0, T_a= +125ºC
Emitter Cut Off Voltage
DC Current Gain
I_EBO
V_EB=4V, I_C=0,
h_FE I_C=10µA, V_CE=5V, BC413/414
BC413
>30
>45
>5.0
<15
<5.0
<15
>100
BC414
>45
>50
Collector Emitter Saturation Voltage V_{CE (sat)}
Base Emitter Saturation Voltage
Base Emitter On Voltage
V_{BE (sat)}
V_{BE (on)}
*I_B is Value for Which I_C=11mA at V_CE=1V
**Pulse test:- Pulse Width =300µs, Duty Cycle 2%
BC413_414Rev060706E
I_C=2mA, V_CE=5V
BC413B/414C
BC413C/414C
BC413/414
I_C=10mA, I_B=0.5mA
I_C=10mA, I_B=see *
**I_C=100mA, I_B=5mA
**I_C=100mA, I_B=5mA
I_C=10µA, V_CE=5V
I_C=100µA, V_CE=5V
I_C=2mA, V_CE=5V
180 - 460
380 - 800
180 - 800
<0.25
<0.6
<0.6
TYP1.1
TYP0.52
TYP0.55
0.55 - 0.75
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
nA
µA
nA
V
V
V
V
V
V
V
Continental Device India Limited
Data Sheet
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