BC393 Datasheet, PDF (1/3 Pages) STMicroelectronics – HIGH VOLTAGE AMPLIFIER

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR TRANSISTORS
BC393 PNP
BC394 NPN
TO-18
Metal Can Package
High Voltage Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Power Dissipation @ T_c=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_j, T_stg
BC393
180
180
6
0.50
0.40
2.27
1.40
8.00
- 65 to +200
THERMAL CHARACTERISTICS
Junction to Ambient in free air
R_{th (j-a)}
440
Junction to Case
R_{th (j-c)}
125
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Emitter Voltage
V_CEO
I_C=10mA, I_B=0
180
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0
180
Emitter Base Voltage
V_EBO
I_E=100µA, I_C=0
6
Collector Cut off Current
I_CBO
V_CB=100V, I_E=0
Collector Cut off Current
I_CEO
V_CE=100V, I_B=0, T_a=150ºC
DC Current Gain
*h_FE
I_C=10mA, V_CE=10V
50
Collector Emitter Saturation Voltage *V_{CE (sat)}
I_C=10mA, I_B=1mA
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=10mA, I_B=1mA
*Pulse Test: Pulse width=300µs, Duty cycle = 2%
DYNAMIC CHARACTERISTICS
DESCRIPTION
Transition frequency
Output Capacitance
Input Capacitance
SYMBOL
TEST CONDITION
MIN
f_T
I_C=20mA, V_CE=20V, f=20MHz 50
C_ob
V_CB=20V, I_E=0, f=1MHz
C_ib
V_EB=0.5V, I_C=0, f=1MHz
SWITCHING TIMES
DESCRIPTION
Turn on Time
Turn on Time
Continental Device India Limited
SYMBOL
TEST CONDITION
t_on I_C=50mA, I_B1=10mA, V_CC=100V
t_off I_C=50mA, I_B2=10mA, V_CC=100V
Data Sheet
MIN
BC394
180
180
UNIT
V
V
V
A
W
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
TYP MAX UNIT
V
V
V
50
nA
50
µΑ
0.3
V
0.9
V
TYP MAX UNIT
200 MHz
7
pF
75
pF
TYP
100
400
MAX UNIT
ns
ns
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