BC369 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP medium power transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
BC369
TO-92
BCE
Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF
Applications, Suitable for Class-B Audio Output Stages up to 3W
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Emitter Voltage
VCES
25
V
Collector -Emitter Voltage
VCEO
20
V
Emitter Base Voltage
VEBO
5.0
V
Collector Current
IC
1.0
A
Collector Current Peak Value
ICM
2.0
A
Base Current
IB
100
mA
Base Current Peak Value
IBM
200
mA
Power Dissipation @ Ta=25 deg C PTA
0.8
W
@ Tc=25 deg C PTC
1.0
W
Junction Temperature
Tj
150
deg C
Storage Temperature Range
Tstg
-65 to +150
deg C
Thermal Resistance
Junction to Ambient in Free Air
Rth (j-a)
156
deg C/W
Junction to Ambient *
Rth (j-a)
125
deg C/W
Junction to Case
Rth (j-c)
60
deg C/W
*Mounted on printed-circuit board , maximum lead length 4mm, mounting
pad for collector lead min 10 mm x10 mm
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP MAX UNIT
Collector Cut- off Current
ICBO
IE=0, VCB=25V
-
-
10
uA
-
Tj=150 deg C
IE=0, VCB=25V
-
-
1.0
mA
Emitter Cut- off Current
IEBO
VEB=5V, IC=0
-
-
10
uA
Base- Emitter on Voltage
VBE(on) IC=5mA, VCE=10V
-
0.7
V
IC=1A, VCE=1V
-
1.0
V
Collector- Emitter Saturation Voltage VCE(Sat) IC=1A, IB=100mA
-
-
0.5
V
Continental Device India Limited
Data Sheet
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