BC337 Datasheet, PDF (1/5 Pages) Motorola, Inc – Amplifier Transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
BC327/A BC328 PNP
BC337/A BC338 NPN
CB ^E
TO-92
Plastic Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL BC327/337
Collector Emitter Voltage
Collector Emitter Voltage
V_CEO
45
V_CES
50
Emitter Base Voltage
Collector Current Continuous
V_EBO
I_C
Collector Current Peak
I_CM
Emitter Current Peak
I_EM
Base Current Continuous
I_B
Base Current Peak
I_BM
Power Dissipation at T_a=25ºC
P_D
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
T_j, T_stg
BC327A/337A
60
60
5
800
1000
1000
100
200
625
5
- 65 to +150
BC328/338
25
30
THERMAL RESISTANCE
Junction to Ambient in free air
R_{th (j-a)}
200
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
SYMBOL
V_CEO
TEST CONDITION
I_C=1mA, I_B=0
BC327/337
BC327A/337A
Collector Emitter Voltage
V_CES
BC328/338
I_C=100µA, I_E=0
BC327/337
BC327A/337A
Emitter Base Voltage
V_EBO
BC328/338
I_E=10µA, I_C=0
Collector Cut Off Current
I_CBO
Emitter Cut Off Current
Collector Emitter Saturation Voltage
Base Emitter On Voltage
I_EBO
*V_{CE (sat)}
*V_{BE (on)}
V_CB=20V, I_E=0
V_CB=20V, I_E=0, T_J=150 ºC
V_EB=5V, I_C=0
I_C=500mA, I_B=50mA
I_C=500mA, V_CE=1V
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
MIN MAX
45
60
25
50
60
30
5.0
100
5
10
0.7
1.2
BC327_338Rev_3 290606D
UNITS
V
V
V
mA
mA
mA
mA
mA
mW
mW/ºC
ºC
ºC/W
UNITS
V
V
V
V
V
V
V
nA
µA
µA
V
V
Continental Device India Limited
Data Sheet
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