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BC303 Datasheet, PDF (1/3 Pages) Micro Electronics – PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EXPITAXIAL PLANAR SILICON TRANSISTORS
BC303, BC304
TO-39
Metal Can Package
PNP SILICON LOW-AND MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current
IC
Power Dissipation @ Ta=25ºC
PD
Junction Temperature
Tj
StorageTemperature Range
Tstg
BC303
BC304
60
45
85
60
7.0
7.0
500
850
175
-65 to +200
ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise)
BC303
DESCRIPTION
SYMBOL TEST CONDITION MIN MAX
Collector Cut off Current
ICBO VCB=85V, IE=0
20
VCB=60V, IE=0
DC Current Gain
hFE BC303 / BC304
IC=150mA,VCE=10V
40
240
BC303 / 304-5
70 140
IC=150mA,VCE=10V
BC303 / 304-6
120 240
IC=150mA,VCE=10V
Collector Emitter Sat. Voltage
VCE(Sat) IC=150mA,IB=15mA ALL 0.65
BC304
MIN MAX
20
UNITS
V
V
V
mA
mW
ºC
ºC
UNITS
nA
nA
V
DYNAMICS CHARACTERISTICS
Transition Frequency
fT IC=50mA, VCE=10V ALL
f=100MHz
0.65
MHz
Continental Device India Limited
Data Sheet
Page 1 of 3