BC300 Datasheet, PDF (1/3 Pages) Micro Electronics – PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC300, BC301, BC302
TO-39
Metal Can Package
NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
BC300 BC301
Collector Emitter Voltage
V_CEO
80 60
Collector Base Voltage
V_CBO
120 90
Emitter Base Voltage
V_EBO
7.0 7.0
Collector Current
I_C
Power Dissipation @ Ta=25ºC
P_D
Junction Temperature
T_j
Storage Temperature Range
T_stg
BC302
45
60
7.0
500
850
175
-65 to +200
UNITS
V
V
V
mA
mW
ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
BC300
MIN MAX
Collector Cut off Current
I_CBO V_CB=120V, I_E=0
20
V_CB=90V, I_E=0
V_CB=60V, I_E=0
DC Current Gain
h_FE I_C=150mA,V_CE=10V
BC300/301/302
40 240
BC300/301/302-4
40 80
BC300/301/302-5
I_C=150mA,V_CE=10V ₇₀ 140
BC300/301/302-6
I_C=150mA,V_CE=10V ₁₂₀ 240
Collector Emitter Sat Voltage V_CE(Sat) I_C=150mA,I_B=15mA ALL 0.5
BC301
MIN MAX
20
BC302
MIN MAX
20
UNITS
nΑ
nΑ
nΑ
V
DYNAMIC CHARACTERISTICS
Transition Frequency
f_T V_CE=10V,I_C=50mA,
ALL
f=20MHz
100 400
MHz
Continental Device India Limited
Data Sheet
Page 1 of 3