BC184L Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – SILICON NPN SMALL SIGNAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL AMPLIFIER TRANSISTORS
BC184L, BC184LB
BC184LC
TO-92
Plastic Package
General Purpose Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector -Emitter Voltage
V_CEO
Collector -Base Voltage
V_CBO
Emitter -Base Voltage
V_EBO
Collector Current Continuous
I_C
Power Dissipation @ Ta=25ºC
P_D
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
P_D
Derate Above 25ºC
Operating And Storage Junction
T_j, T_stg
Temperature Range
VALUE
30
45
6.0
100
350
2.8
1.0
8.0
-55 to +150
THERMAL RESISTANCE
Junction to Case
R_th(j-c)
125
Junction to Ambient
R_th(j-a)
357
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector -Emitter Voltage
V_CEO I_C=2mA,I_B=0
30
Collector -Base Voltage
V_CBO I_C=10µA.I_E=0
45
Emitter-Base Voltage
V_EBO I_E=100µA, I_C=0
6
Collector-Cut off Current
I_CBO V_CB=30V,I_E=0
Emitter-Cut off Current
I_EBO V_EB=4V, I_C=0
DC Current Gain
h_FE I_C=10µA,V_CE=5V
100
BC184L
I_C=2mA,V_CE=5V
240
I_C=100mA,V_CE=5V
130
TYP
MAX UNITS
V
V
V
0.2
15
nA
15
nA
800
Continental Device India Limited
Data Sheet
Page 1 of 4