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| BC184 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTORS | |||
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
IS/ISO 9002
Lic# QSC/L- 000019.2
BC184
BC184B
BC184C
TO-92
Plastic Package
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector -Emitter Voltage
VCEO
Collector -Base Voltage
VCBO
Emitter -Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation @ Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction
Tj, Tstg
Temperature Range
VALUE
30
45
6
100
350
2.8
1
8
-55 to +150
THERMAL RESISTANCE
Junction to ambient
Rth(j-a)
357
Junction to case
Rth(j-c)
125
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector -Emitter Voltage
VCEO IC=2mA,IB=0
30
Collector -Base Voltage
VCBO IC=10µA.IE=0
45
Emitter-Base Voltage
VEBO IE=100µA, IC=0
6
Collector-Cut off Current
ICBO VCB=30V,IE=0
Emitter-Cut off Current
IEBO VEB=4V, IC=0
DC Current Gain
hFE IC=10µA,VCE=5V
100
BC184
IC=2mA,VCE=5V
240
IC=100mA*,VCE=5V
130
Collector Emitter Saturation Voltage VCE(Sat) IC=10mA,IB=0.5mA
IC=100mA,IB=5.0mA*
Base Emitter Saturation Voltage
VBE(Sat) IC=100mA,IB=5mA*
Base Emitter On Voltage
VBE(ON) IC=2mA,VCE=5V
0.55
IC=100µA,VCE=5V
IC=100mA,VCE=5V*
TYP
0.2
0.07
0.2
0.62
0.5
0.83
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
MAX
15
15
UNITS
V
V
V
nA
nA
800
0.25
V
0.6
V
1.2
V
0.7
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4
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