BC177 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP general purpose transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC177, A, B, C
BC178, A, B, C
BC179, A, B, C
TO-18
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation@ Ta=25 degC
Derate Above 25 deg C
Power Dissipation@ Tc=25 degC
Derate Above 25 deg C
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
SYMBOL
VCEO
VCES
VCBO
VEBO
IC
PD
PD
Tj, Tstg
Rth(j-c)
BC177 BC178
45
25
50
30
50
30
5.0
5.0
0.2
0.6
2.28
1.0
6.67
-65 to +200
BC179
20
25
25
5.0
UNIT
V
V
V
V
A
W
mW/deg C
W
mW/deg C
deg C
175
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector-Cut off Current
ICES VCE=20V, IE=0
Tamb=125 deg C
VCE=20V, IE=0
Collector -Base Voltage
VCBO IC=10uA, IE=0
BC177
BC178
BC179
MIN TYP MAX UNIT
-
100 nA
-
4.0 uA
50
-
V
30
-
V
25
-
V
Collector -Emitter Voltage
VCEO IC=2mA,IB=0
BC177
BC178
BC179
45
-
V
25
-
V
20
V
Emitter-Base Voltage
VEBO IE=10uA, IC=0
5.0
-
V
DC Current
hFE
IC=2mA, VCE=5V
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter on Voltage
VCE(Sat) IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
VBE(Sat) IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
VBE(on) IC=2mA, VCE=5V
BC177
BC178
BC179
A Group
B Group
C Group
120
460
120
800
180
800
120
220
180
460
380
800
-
0.20 V
-
0.60 V
-
0.80 V
- 0.90 -
V
0.60
0.75 V
Continental Device India Limited
Data Sheet
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