BAW56 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed double diode

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR DUAL SWITCHING DIODES
3
Pin Configuration
1 = CATHODE
2 = CATHODE
3 = ANODE
1
2
BAW56
SOT-23
Formed SMD Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
Marking
BAW56 - A1
High-Speed Switching Dual Diodes, Common Anode
ABSOLUTE MAXIMUM RATINGS (Rating Per Diode)
DESCRIPTION
SYMBOL
Continuous Reverse Voltage
V_R
Repetitive Peak Reverse Voltage
Forward Current (DC)
Repetitive Peak Forward Current
Non Repetitive Peak Forward Current
V_RRM
I_F
I_FRM
(per crystal)
t=1 µs
I_FSM
t=1 ms
I_FSM
t=1 s
I_FSM
Power Dissipation up to T_a=25ºC
P_D
Storage Temperature
T_stg
Junction Temperature
T_j
VALUE
75
85
215
450
4.0
1.0
0.5
250
- 55 to +150
150
THERMAL RESISTANCE
Junction to Ambient in free air
R_{th (j-a)}
500
ELECTRICAL CHARACTERISTICS (T_a=25º C unless specified otherwise) per diode
DESCRIPTION
Forward Voltage
Reverse Current
Diode Capacitance
Forward Recovery Voltage
SYMBOL TEST CONDITION
MIN
V_F
I_F = 1mA
I_F = 10mA
I_F = 50mA
I_F = 150mA
I_R
V_R=25V, T_J=150ºC
V_R=75V
V_R=75V, T_J=150ºC
C_d
V_R=0V, f=1MHz
V_fr
I_F=10mA, t_r=20ns
Reverse Recovery Time
t_rr
I_F=10mA, to I_R=60mA,
I_R=1.0mA, R_L=100Ω
Reverse Charge When Switched Time
Q_S
I_F=10mA to V_R=5V,
R_L=100Ω
BAW56REV_1 071105E
MAX
0.715
0.855
1.0
1.25
30
1.0
50
2.0
1.75
4.0
45
Continental Device India Limited
Data Sheet
UNIT
V
V
mA
mA
A
A
A
mW
ºC
ºC
K/W
UNIT
V
V
V
V
µA
µA
µA
pF
V
ns
pC
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