BAV99 Datasheet, PDF (1/5 Pages) NXP Semiconductors – High-speed double diode

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR HIGH SPEED SWITCHING DIODES
3
Pin Configuration
1 = ANODE
2 = CATHODE
3 = ANODE/
CATHODE
1
2
BAV99
SOT-23
Formed SMD Package
Marking
BAV99 = A7
High-Speed Switching Series Diode Pair
ABSOLUTE MAXIMUM RATINGS (Rating Per Diode)
DESCRIPTION
SYMBOL
Repetitive Peak Reverse Voltage
V_RRM
Reverse Voltage
Forward Current (DC)
Repetitive Peak Forward Current
Non Repetitive Peak Forward Current
(per crystal)
t=1 µs
t=1 ms
t=1 s
Power Dissipation up to T_a=25ºC
Junction Temperature
V_R
I_F
I_FRM
I_FSM
I_FSM
I_FSM
P_D
T_j
Ambient Temperature
T_amb
Storage Temperature Range
T_stg
THERMAL RESISTANCE
Junction to Ambient in free air
Junction to Solder Point
R_{th (j-a)}
R_{th (j-sp)}
VALUE
100
100
215
500
4.0
1.0
0.5
250
150
- 65 to +150
- 65 to +150
500
360
ELECTRICAL CHARACTERISTICS (T_a=25º C unless specified otherwise) per diode
DESCRIPTION
SYMBOL TEST CONDITION MIN
Forward Voltage
V_F
I_F = 1mA
I_F = 10mA
I_F = 50mA
I_F = 150mA
Reverse Current
I_R
V_R=25V
V_R=25V, T_J=150ºC
V_R=80V
V_R=80V, T_J=150ºC
MAX
0.715
0.855
1.0
1.25
30
30
0.5
50
UNIT
V
V
mA
mA
A
A
A
mW
ºC
ºC
ºC
K/W
K/W
UNIT
V
V
V
V
nA
µA
µA
µA
BAV99_Rev_1 200310E
Continental Device India Limited
Data Sheet
Page 1 of 5