BAV70 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed double diode

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR DUAL SWITCHING DIODES
3
Pin Configuration
1 = ANODE
2 = ANODE
3 = CATHODE
1
2
BAV70
SOT-23
Formed SMD Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
Marking
BAV70 = A4
High-Speed Switching Dual Diodes, Common Cathode
ABSOLUTE MAXIMUM RATINGS (Rating Per Diode)
DESCRIPTION
Continuous Reverse Voltage
SYMBOL
V_R
Repetitive Peak Reverse Voltage
Forward Current (DC)
Repetitive Peak Forward Current
V_RRM
I_F
I_FRM
Non Repetitive Peak Forward Current
(per crystal)
t=1 µs
I_FSM
t=1 ms
I_FSM
t=1 s
I_FSM
Power Dissipation up to T_a=25ºC
P_D
Storage Temperature Range
T_stg
Junction Temperature
T_j
VALUE
70
75
215
450
4.0
1.0
0.5
250
- 55 to +150
150
THERMAL RESISTANCE
Junction to Ambient in free air
R_{th (j-a)}
500
ELECTRICAL CHARACTERISTICS (T_a=25º C unless specified otherwise) per diode
DESCRIPTION
Forward Voltage
Reverse Current
Diode Capacitance
Forward Recovery Voltage
Reverse Recovery Time
SYMBOL TEST CONDITION
MIN MAX
V_F
I_F = 1mA
I_F = 10mA
I_F = 50mA
I_F = 150mA
I_R
V_R=25V, T_J=150ºC
0.715
0.855
1.0
1.25
60
V_R=70V
2.5
V_R=70V, T_J=150ºC
100
C_d
V_R=0V, f=1MHz
1.5
V_fr
I_F=10mA, t_r=20ns
1.75
t_rr
I_F=10mA, to I_R=60mA,
I_R=1.0mA, R_L=100Ω
4.0
Reverse Charge When Switched Time
Q_S
I_F=10mA to V_R=5V,
R_L=100Ω
45
BAV70REV_1 071105E
Continental Device India Limited
Data Sheet
UNIT
V
V
mA
mA
A
A
A
mW
ºC
ºC
K/W
UNIT
V
V
V
V
µA
µA
µA
pF
V
ns
pC
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