BAV23S Datasheet, PDF (1/4 Pages) NXP Semiconductors – General purpose double diode

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE
3
Pin Configuration
1 = ANODE
2 = CATHODE
3 = ANODE/
1
2
CATHODE
BAV23S
SOT-23
MARKING:- L31
DESCRIPTION
BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope
Intended for Surface Mounting. The Device is Designed for Switching & General Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
Continuous Reverse Voltage
Single Diode
Series Connection
Repetitive Peak Reverse Voltage
Single Diode
Series Connection
Forward Current (DC)
Single Diode
Series Connection
Repetitive Peak Forward Current
Single Diode
Series Connection
Non Repetitive Peak Forward Current t=1s
Single Diode
Series Connection
Non Repetitive Forward Current t=1us
Single Diode
Series Connection
Power Dissipation
Storage Temprature Range
Junction Temperature
THERMAL RESISTANCE
Junction to Ambient
*Mounted on FR4 Printboard
VR
VRRM
IF(AV)
IFRM
IFSM
IFSM
Ptot
Tstg
Tj
Rth(j-a)*
200
400
250
500
225
125
625
450
0.5
0.4
2.5
1.5
300
-65 to 150
150
500
UNIT
V
V
V
V
mA
mA
mA
mA
A
A
A
A
mW
deg C
deg C
K/W
Continental Device India Limited
Data Sheet
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