BAT42W Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY BARRIER DIODES

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR SCHOTTKY DIODES
BAT42W / BAT43W
SOD-123
PLASTIC PCAKAGE
Marking Codes: BAT42W= L2 with cathode band
BAT43W= L3 with cathode band
These Diodes Feature Very Low Turn-on Voltage and Fast Switching
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Repetitive Peak Reverse Voltage
Forward Continuous Current at T_amb=25ºC
Repetitive Peak Forward Current t_p <1ms δ
<0.5, Tamb=25ºC
SYMBOL
V_RRM
I_F
I_FRM
VALUE
30
200
500
Surge Forward Current at t_p <10m, T_amb=25ºC *I_FSM
4.0
Power Dissipation T_a=65ºC
*P_tot
Junction Temperature
T_j
Ambient Operating Temperature Range
T_amb
Storage Temperature Range
T_stg
200
125
- 55 to +125
- 55 to +150
THERMAL RESISTANCE
Junction to Ambient in free air
*R_{th (j-a)}
300
*Valid provided that electrodes are kept at ambient temperature
RICAL CHARACTERISTICS (T_j=25ºC unless specified otherwise)
DESCRIPTION
Reverse Breakdown Voltage
Reverse Current
Forward Voltage
SYMBOL
V_(BR)R
**I_R
**V_F
TEST CONDITION
I_R=100µA
V_R=25V
V_R=25V, T_j=100ºC
I_F=200mA
I_F=10mA BAT42W
I_F=50mA BAT42W
I_F=2mA BAT43W
I_F=15mA BAT43W
DYNAMIC CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
Diode Capacitance
C_d
V_R=1V, f=1MHz
MIN MAX
30
0.5
100
1.0
0.40
0.65
0.26 0.33
0.45
MIN MAX
TYP 7.0
Reverse Recovery Time
t_rr
I_F=10mA to I_R=10mA, to
I_R=1mA, R_L=100Ω
5
Detection Efficiency
Pulse test t_p=300µs δ <2%
BAT42W_43W Rev020310E
Continental Device India Limited
π_v
R_L=15KΩ , C_L=300pF,
80
f=45MHz, V_RF=2V
Data Sheet
UNIT
V
mA
mA
A
mW
o_C
o_C
o_C
o_C/W
UNIT
V
µA
µA
V
V
V
V
V
UNIT
pF
ns
%
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