BAT42 Datasheet, PDF (1/3 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODES

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR SCHOTTKY DIODES
BAT42
BAT43
DO- 35
Glass Axial Package
General Purpose Metal to Silicon Diodes Featuring Very Low Turn-on Voltage and Fast Switching
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Repetitive Peak Reverse Voltage
Forward Current (DC)
Repetitive Peak Forward Current tp <1s
δ <0.5
Surge Non Repetitive Forward Current
tp<10ms
Power Dissipation T_a=65ºC
Storage Temperature Range
Junction Temperature
Maximum Lead Temperature for
Soldering during 10s at 4mm from case
SYMBOL
V_RRM
*I_F
*I_FRM
*I_FSM
P_D
T_stg
T_j
T_L
THERMAL RESISTANCE
Junction to Ambient in free air
*R_{th (j-a)}
*On infinite heat sink with 4mm lead length
VALUE
30
200
500
4.0
200
- 65 to +150
- 65 to +125
230
300
ELECTRICAL CHARACTERISTICS (T_j=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Reverse Breakdown Voltage
V_(BR)R
I_R=100µA
Forward Voltage
**V_F
I_F=200mA All Types
I_F=10mA BAT42
I_F=50mA BAT42
I_F=2mA
BAT43
I_F=15mA
BAT43
Reverse Current
**I_R
V_R=25V T_j=25ºC
V_R=25V T_j=100ºC
DYNAMIC CHARACTERISTICS
DESCRIPTION
Diode Capacitance
SYMBOL
C_d
Reverse Recovery Time When Switched
From
t_rr
Detection Efficiency
π_v
TEST CONDITION
V_R=1V, f=1MHz
I_F=10mA to I_R=10mA,
measured at I_RR=1mA,
R_L=100Ω
R_L=15KΩ , C_L=300pF,
f=45MHz, V_I=2V
MIN MAX
30
1.0
0.40
0.65
0.26 0.33
0.45
0.5
100
MIN MAX
TYP 7.0
5
80
Pulse test: tp=300µs δ <2%
BAT42_43Rev300105E
UNIT
V
mA
mA
A
mW
o_C
o_C
o_C
o_C/W
UNIT
V
V
V
V
V
V
µA
µA
UNIT
pF
ns
%
Continental Device India Limited
Data Sheet
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