BAS85 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Schottky barrier diode

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR SCHOTTKY BARRIER DIODE
BAS85
SOD - 80C
Mini MELF (LL- 34 )
Polarity: Cathode is indicated by a grey band
Hermetically Sealed, Glass Silicon Diode
Ultra High Speed Switching Diode
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Reverse Voltage (Continuous)
Forward Current (DC)
Average Forward Current
Repetitive Peak Forward Current tp <1s; δ <0.5
Non Repetitive Peak Forward Current t_p=10ms
Storage Temperature
Junction Temperature
Operating Ambient Temperature
THERMAL RESISTANCE
Junction to Ambient in free air
SYMBOL
V_R
I_F
I_{F (Av)}
I_FRM
I_FSM
T_stg
T_j
T_amb
R_{th (j-a)}
VALUE
30
200
200
300
5
- 65 to +150
125
- 65 to +125
320
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Forward Voltage
V_F
I_F=0.1mA
I_F=1mA
I_F=10mA
I_F=30mA
I_F=100mA
Reverse Current
I_R
V_R=25V
Diode Capacitance
C_d
V_R=1V, f=1MHz
BAS85Rev121105E
UNIT
V
mA
mA
mA
A
ºC
ºC
ºC
K/W
MAX
0.24
0.32
0.40
0.50
0.80
2.3
10
UNIT
V
V
V
V
V
µA
pF
Continental Device India Limited
Data Sheet
Page 1 of 3