BAS70W Datasheet, PDF (1/3 Pages) NXP Semiconductors – Schottky barrier double diodes

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SURFACE MOUNT SCHOTTKY BARRIER DIODES
BAS70W, BAS70-04W
BAS70-05W, BAS70-06W
SOT-323
Formed SMD Package
BAS70W
3
3
Pin Configuration
1 = ANODE
2 = NC
3 = CATHODE
1
2²
BAS70-05W
3
3
Pin Configuration
1 = ANODE
2 = ANODE
3 = CATHODE
1
2²
BAS70-04W
3
3
Pin Configuration
1 = ANODE
2 = CATHODE
3 = ANODE/
CATHODE
1
2₂
BAS70-06W
3
3
Pin Configuration
1 = CATHODE
2 = CATHODE
3 = ANODE
1
2₂
Marking
BAS70W = 73
BAS70-04W = 74
BAS70-05W = 75
BAS70-06W = 76
Ultra High Speed Switching Diodes
ABSOLUTE MAXIMUM RATINGS (per diode)
DESCRIPTION
Continuous Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Voltage t_P < 1s; δ < 0.5
Non Repetitive Peak Forward Current tp=10ms
Storage Temperature
Junction Temperature
Operating Ambient Temperature
SYMBOL
V_R
I_F
I_FRM
I_FSM
T_stg
T_j
T_amb
VALUE
70
70
70
100
- 65 to +150
150
- 65 to +150
THERMAL RESISTANCE
Junction to Ambient in free air
*R_{th (j-a)}
625
*Sot-323 standard mounting condition
ELECTRICAL CHARACTERISTICS (T_a=25º C unless specified otherwise) Per diode
DESCRIPTION
SYMBOL TEST CONDITION MIN
Forward Voltage
V_F
I_F=1mA
I_F=10mA
I_F=15mA
Reverse Current
I_R
V_R=70V
V_R=50V
Change Carrier Life Time (Krakauer method)
t
I_F=5mA
Diode Capacitance
C_d
V_R=0V, f=1MHz
BAS70W_06Rev 170210E
MAX
0.41
0.75
1.00
10
0.1
100
2.0
Continental Device India Limited
Data Sheet
UNIT
V
mA
mA
mA
o_C
o_C
o_C
K/W
UNIT
V
V
V
µA
µA
ps
pF
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