BAS70 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Schottky barrier double diodes

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SURFACE MOUNT SCHOTTKY DIODES
BAS70, BAS70-04
BAS70-05, BAS70-06
SOT-23
Formed SMD Package
BAS70
3
3
Pin Configuration
1 = ANODE
2 = NC
3 = CATHODE
1
22
BAS70-05
3
3
Pin Configuration
1 = ANODE
2 = ANODE
3 = CATHODE
1
2²
BAS70-04
3
3
Pin Configuration
1 = ANODE
2 = CATHODE
3 = ANODE/
CATHODE
1
2²
BAS70-06
3
3
Pin Configuration
1 = CATHODE
2 = CATHODE
3 = ANODE
1
22
Marking
BAS70 = 73
BAS70-04 = 74
BAS70-05 = 75
BAS70-06 = 76
Ultra High Speed Switching Diodes
ABSOLUTE MAXIMUM RATINGS (per diode)
DESCRIPTION
Continuous Reverse Voltage
Continuous Forward Current
SYMBOL
V_R
I_F
Repetitive Peak Voltage t_P < 1s; δ < 0.5
Non Repetitive Peak Forward Current
tp=10ms
Storage Temperature
I_FRM
I_FSM
T_stg
Junction Temperature
T_j
Storage Temperature Range
T_amb
VALUE
70
70
70
100
- 65 to +150
150
- 65 to +150
THERMAL RESISTANCE
Junction to Ambient in free air
R_{th (j-a)}
500
ELECTRICAL CHARACTERISTICS
DESCRIPTION
Forward Voltage
Reverse Current
Diode Capacitance
(T_a=25º C unless specified otherwise)
SYMBOL TEST CONDITION
V_F
I_F=1mA
I_F=10mA
I_F=15mA
*I_R
V_R=70V
V_R=50V
C_d
V_R=0V, f=1MHz
Per diode
MIN MAX
0.41
0.75
1.00
10
0.1
2.0
Pulse Test: t_p=300µs; δ=0.02
BAS70_06Rev_1 300606E
Continental Device India Limited
Data Sheet
UNIT
V
mA
mA
mA
o_C
o_C
o_C
K/W
UNIT
V
V
V
µA
µA
pF
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