BAS521 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High voltage switching diode

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HIGH VOLTAGE SWITCHING DIODE
BAS521
SOD- 523
Formed SMD Package
Marking:- with cathode band
BAS521 – L4
High Speed and High Voltage Switching Diode
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Continuous Reverse Voltage
V_R
Repetitive Peak Reverse Voltage
V_RRM
Continuous Forward Current T_s < 90 ºC
*I_F
Repetitive Peak Forward Voltage t_P = 1ms; δ =
0.25
I_FRM
Non Repetitive Peak Forward Current tp=1µs,
Square wave, T_j=25ºC Prior to Surge
I_FSM
Total Power Dissipation T_s=90ºC
*p_tot
Storage Temperature
T_stg
Junction Temperature
T_j
Operating Ambient Temperature
T_amb
THERMAL RESISTANCE
Junction to Solder Point
**R_{th (j-s)}
Junction to Ambient in free air
R_{th (j-a)}
VALUE
300
300
250
1.0
4.5
500
- 65 to +150
150
- 65 to +150
120
500
UNIT
V
V
mA
A
A
mW
o_C
o_C
o_C
K/W
K/W
*T_s is the temperature at the soldering point of the cathode tab,
** Soldering point of the Cthode tab.
ELECTRICAL CHARACTERISTICS (T_a=25º C unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Breakdown Voltage
V_BR
I_R=100mA
300
Forward Voltage
***V_F
I_F=100mA
Reverse Current
I_R
V_R=250V
V_R=250V, T_a=150ºC
Reverse Recovery Time, when Switched from
I_F=30mA to I_R=30mA, R_L=100Ω, measured at
t_rr
I_R=3mA
I_F=5mA
Diode Capacitance
C_d
V_R=0V, f=1MHz
***Pulse test:- tp=300µ s; δ =0.02
BAS521 Rev 170210E
MAX
1.1
0.15
100
50
5.0
UNIT
V
V
mA
mA
ns
pF
Continental Device India Limited
Data Sheet
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