BAS216WS Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – High Speed Switching Diode

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON EPITAXIAL SWITCHING DIODE
BAS216WS
SOD-323
PLASTIC PCAKAGE
Marking
BAS216WS=W2 with cathode band
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
Repetitive Peak Reverse Voltage
Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non Repetitive Peak Forward Surge Current
at t=1s
at t=1ms
at t=1µs
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_RRM
V_R
I_F
I_FRM
I_FSM
P_tot
T_j
T_stg
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Forward Voltage
V_F
I_F=1mA
I_F=10mA
I_F=50mA
I_F=150mA
Reverse Current
I_R
V_R=25V
V_R=75V
V_R=25V, T_j=150ºC
V_R=75V, T_j=150ºC
VALUE
85
75
250
500
0.5
1.0
4.0
200
150
- 65 to +150
MIN
MAX
0.715
0.855
1.0
1.25
30
1.0
30
50
DYNAMIC CHARACTERISTICS
Diode Capacitance
Reverse Recovery Time
BAS216WS Rev010410E
C_tot
V_R=0V, f=1MHz
1.5
I_F=10mA, to I_R=10mA
t_rr
R_L=100 Ω
4.0
Measured at I_R=1mA
.
UNIT
V
V
mA
mA
A
A
A
mW
ºC
ºC
UNIT
V
V
V
V
nA
µA
µA
µA
pF
ns
Continental Device India Limited
Data Sheet
Page 1 of 3