BAS16W Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON EXPITAXIAL PLANAR SWITCHING DIODE
3
Pin Configuration
1 = ANODE
2 = NC
3 = CATHODE
1
2
BAS16W
SOT-323
PLASTIC PACKAGE
Marking
BAS16W = A6
High Switching Diode
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Forward Current (Continuous)
Repetitive Peak Forward Voltage
Non Repetitive Peak Forward Current,
square wave T_j=25ºC prior to surge
t=1µs
t=1ms
t=1s
Power Dissipation at T_amb=25ºC
Junction Temperature
Storage Temperature Range
SYMBOL
V_R
V_RRM
*I_F
I_FRM
I_FSM
I_FSM
I_FSM
*P_tot
T_j
T_stg
VALUE
75
85
175
500
4.0
1.0
0.5
200
150
- 65 to +150
THERMAL RESISTANCE
Junction to tie point
Junction to Ambient in free air
R_{th (j-tp)}
*R_{th (j-a)}
*Device mounted on an FR4 printed circuit board
ELECTRICAL CHARACTERISTICS
DESCRIPTION
Forward Voltage
Reverse Voltage Leakage Current
Diode Capacitance
(T_j=25ºC unless specified otherwise)
SYMBOL TEST CONDITION
V_F
I_F=1mA
I_F=10mA
I_F=50mA
I_F=150mA
I_R
V_R=25V
V_R=75V
V_R=25V, T_j=150ºC
V_R=75V, T_j=150ºC
C_d
V_R=0V, f=1MHz
300
625
MIN
Reverse Recovery Time When Switched
from
I_F=10mA to
t_rr
I_R=60mA, R_L100 Ω,
Measured at I_R=1mA
Forward Recovery Voltage
V_fr
when switched from
I_F=10mA to t_r=20ns
BAS16W Rev090206E
TYP
MAX
0.715
0.855
1.0
1.25
30
1.0
30
50
2.0
4.0
1.75
UNIT
V
V
mA
mA
A
A
A
mW
o_C
o_C
K/W
K/W
UNIT
V
V
V
V
nA
µA
µA
µA
pF
ns
V
Continental Device India Limited
Data Sheet
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