BAS16 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Small Signal Diode

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SILICON PLANAR SWITCHING DIODE
3
Pin Configuration
1 = ANODE
2 = NC
3 = CATHODE
1
2
BAS16
SOT-23
Formed SMD Package
Marking
BAS16 = A6
High-Speed Switching Diodes
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Forward Current (DC)
Repetitive Peak Forward Current
Non Repetitive Peak Forward Current
(Per Crystal)
t=1µs
t=1ms
t=1s
Power Dissipation @ T_a=25ºC
Storage Temperature Range
Junction Temperature
Thermal Resistance
Junction to Ambient in free fair
SYMBOL
V_R
V_RRM
I_F
I_FRM
I_FSM
I_FSM
I_FSM
P_D
T_stg
T_j
R_{th (j-a)}
VALUE
75
85
215
500
4.0
1.0
0.5
0.25
- 55 to +150
150
500
ELECTRICAL CHARACTERISTICS (T_a=25º C unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Forward Voltage
Reverse Voltage Leakage Current
V_F
I_F = 1 mA
I_F = 10 mA
I_F = 50 mA
I_F = 150 mA
I_R
V_R=25V, T_j=150ºC
V_R=75V
V_R=75V, T_j=150ºC
Diode Capacitance
C_d
V_R=0V, f=1MHz
Forward Recovery Voltage When
Switched to
V_fr
I_F=10mA, t_P=20ns
Reverse Recovery Time When Switched
from
I_F=10mA to
t_rr
I_R=60mA, R_L100 Ω,
measured at I_R=1mA
Recovery Charge When Switched from
Q_S
I_F=10mA to V_R=5V,
R_L=100 Ω,
BAS16 Rev_1 270304E
TYP
MAX
0.715
0.855
1.0
1.25
30
1.0
50
2.0
1.75
4.0
45
UNIT
V
V
mA
mA
A
A
A
W
o_C
o_C
K/W
UNIT
V
V
V
V
µA
µA
µA
pF
V
ns
pC
Continental Device India Limited
Data Sheet
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