BAS116 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Low-leakage diode

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR SWITCHING DIODE
3
Pin Configuration
1 = ANODE
2 = NC
3 = CATHODE
1
2
BAS116
SOT-23
Formed SMD Package
Marking
BAS116 =JV
Low Leakage Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Forward Current (DC)
Non Repetitive Peak Surge Forward
Current
t=1µs
t=1s
Power Dissipation at T_a=54ºC
Junction Temperature
Storage Temperature Range
SYMBOL
V_R
V_RRM
I_F
I_FSM
I_FSM
P_D
T_j
T_stg
VALUE
80
85
250
4.5
0.5
250
150
- 65 to +150
Thermal Resistance
Junction to Soldering Point
*R_{th (j-s)}
< 260
*For calculation of R_{th (j-a)} please refer to application note thermal resistance
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Breakdown Voltage
V_(BR)
I_(BR)=100µA
85
Reverse Voltage Leakage Current
Forward Voltage
I_R
V_R=75V
V_R=75V, T_a=150ºC
V_F
I_F=1mA
I_F=10mA
I_F=50mA
I_F=150mA
Diode Capacitance
C_d
V_R=0V, f=1MHz
Reverse Recovery Time When Switched
from
I_F=10mA to
t_rr
I_R=10mA, R_L100 Ω,
measured at I_R=1mA
TYP
2.0
MAX
5.0
80
0.9
1.0
1.1
1.25
1.5
UNIT
V
V
mA
A
A
mW
o_C
o_C
K/W
UNIT
V
nA
nA
V
V
V
V
pF
µs
BAS116 Rev140505E
Continental Device India Limited
Data Sheet
Page 1 of 3