2n917 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON PLANAR TRANSISTOR

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N917
TO-72
Metal Can Package
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Power Dissipation @ TA=25ºC
Derate Above 25ºC
Power Dissipation @ T_C=25ºC
Derate Above 25ºC
Operating & Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_D
P_D
T_j, T_stg
VALUE
30
15
3
50
200
1.14
300
1.71
-65 to +200
UNIT
V
V
V
mA
mW
mW/ºC
mW
mW/ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP MAX
Collector Emitter Sustaining Voltage V_CEO(SUS) I_C=3mA, I_B=0
15
-
-
Collector Base Voltage
V_CBO I_C=1µA, I_E=0
30
-
-
Emitter Base Voltage
V_EBO I_E=10µA, I_C=0
3.0
-
Collector Cut off Current
I_CBO V_CB=15V, I_E=0
-
-
1.0
VCB=15V, IE=0, TA=150ºC
-
-
1.0
DC Current Gain
h_FE I_C=3mA, V_CE=1V
20
-
200
Collector Emitter Saturation Voltage V_CE(sat) I_C=10mA, I_B=1mA
-
-
0.4
Base Emitter Saturation Voltage
V_BE(sat) I_C=10mA, I_B=1mA
-
-
1.0
UNIT
V
V
V
nA
µA
V
V
Continental Device India Limited
Data Sheet
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