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| 2N995 Datasheet, PDF (1/4 Pages) Continental Device India Limited – PNP SILICON PLANAR TRANSISTOR | |||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTOR
2N995
TO-18
Metal Can Package
ABSOLUTE MAXIMUM RATINGS (Ta=25º C unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation at Ta= 25º C
at TC= 25º C
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PD
Tj, Tstg
2N995
15
20
4
200
0.36
1.2
-65 to +200
ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
Collector Emitter Voltage
Collector Base Voltage
VCEO
VCBO
IC= 1mA, IB= 0
15
IC= 10µA, IE= 0
20
Emitter Base Voltage
Collector Cut Off Current
VEBO
ICBO
IC= 10µA, IB= 0
4
VCB= 15V, IE= 0
VCB= 15V,Ta= 150º C
Emitter leakage current
IEBO
VEB= 4V, IB= 0
Collector Emitter Saturation Voltage
VCE(Sat)
IC= 10mA, IB= 1mA
Base Emitter Saturation Voltage
VBE(Sat)
IC= 10mA, IB= 1mA
IC= 1mA, VCE= 1V
25
DC Current Gain
*hFE
IC= 20mA, VCE= 1V
35
IC= 50mA, VCE= 1V
25
UNITS
V
V
V
mA
W
W
ºC
MAX
5
25
10
0.2
0.95
UNITS
V
V
V
nA
µA
µA
V
V
140
2N995Rev_270808D
Continental Device India Limited
Data Sheet
Page 1 of 2
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