2N720A Datasheet, PDF (1/4 Pages) STMicroelectronics – HIGH VOLTAGE GENERAL PURPOSE

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR SWITCHING TRANSISTOR
2N720A
TO-18
Metal Can Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CEO
Collector - Emitter Voltage
V_CER
Collector Base Voltage
V_CBO
Emitter Base Voltage
V_EBO
Power Dissipation @Ta=25ºC
P_D
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
P_D
Derate Above 25ºC
Operating and Storage Junction
T_j, T_stg
Temperature Range
THERMAL RESISTANCE
Junction to Case
R_th(j-c)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut off Current
BV_{CEO (sus)}*
BV_CBO
BV_EBO
I_CBO
I_C=30mA,I_B=0
I_C=100µA.I_E=0
I_E=100µA, I_C=0
V_CB=90V, I_E=0
Emitter Cut off Current
Collector Emitter Saturation Voltage
I_EBO
V_CE(Sat)*
V_CB=90V, I_E=0
Ta=150ºC
V_EB=5V, I_C=0
I_C=50mA,I_B=5mA
I_C=150mA,I_B=15mA
Base Emitter Saturation Voltage
V_BE(Sat)*
I_C=50mA,I_B=5mA
I_C=150mA,I_B=15mA
VALUE
80
100
120
7
500
2.86
1.8
10.3
-65 to +200
97
VALUE
MIN MAX
80
120
7
10
15
10
1.2
5.0
0.9
1.3
UNIT
V
V
V
V
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
UNIT
V
V
V
nA
µA
nA
V
V
V
V
Continental Device India Limited
Data Sheet
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