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| 2N699 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON EPITAXIAL TRANSISTOR | |||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTOR
2N 699
TO-39
Metal Can Package
General Purpose Transistor
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCER
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Total Device Dissipation @ Ta=25ºC
PD
Derate Above 25ºC
Total Device Dissipation@ Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction
Tj, Tstg
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
Rth(j-a)
Rth(j-c)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage BVCER* IC=100mA,RBE=10â¦
Collector Cut off Current
ICBO VCB=60V, IE=0
VCB=60V, IE=0,Ta=150ºC
Emitter Cut off Current
IEBO VEB =2V, IC=0
DC Current Gain
hFE* IC=150mA,VCE=10V
Collector Emitter Saturation Voltage VCE(Sat) * IC=150mA,IB=15mA
Base Emitter Saturation Voltage
VBE(Sat) * IC=150mA,IB=15mA
VALUE
80
120
5
0.6
4
2
13.3
-65 to +200
UNITS
V
V
V
W
mW/ºC
W
mW/ºC
ºC
250
ºC/W
75
ºC/W
MIN MAX UNITS
80
V
2.0
µA
-
200
µA
100
µA
40
120
5.0
V
1.3
V
Continental Device India Limited
Data Sheet
Page 1 of 4
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