2N697 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO39

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTOR
2N 697
TO-39
Metal Can Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CER
Collector Base Voltage
V_CBO
Emitter Base Voltage
V_EBO
Power Dissipation @ Ta=25ºC
P_D
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
P_D
Derate Above 25ºC
Operating And Storage Junction
T_j, T_stg
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Base Breakdown Voltage
BV_CBO I_C=100µA,I_E=0
Collector Emitter Breakdown Voltage BV_CER* I_C=100mA,R_BE=10Ω
Emiter Base Breakdown Voltage
BV_EBO I_E=100µA, I_C=0
Collector Cut off Current
I_CBO V_CB=30V, I_E=0
V_CB=30V, I_E=0,Ta=150ºC
DC Current Gain
h_FE* I_C=150mA,V_CE=10V
Collector Emitter Saturation Voltage V_CE(Sat) * I_C=150mA,I_B=15mA
Base Emitter Saturation Voltage
V_BE(Sat) * I_C=150mA,I_B=15mA
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
Output Capacitance
| h_fe |
C_ob
I_C=50mA, V_CE=10V,
f=20MHz
V_CB=10V, I_E=0, f=1MHz
*Pulse Test: Pulse Width <300µs, Duty Cycle <2%
VALUE
40
60
5
600
4
2
13.3
-65 to +200
UNITS
V
V
V
mW
mW/ºC
W
mW/ºC
ºC
MIN MAX
60
40
5
1
100
10
120
1.5
1.3
UNITS
V
V
V
µA
µA
V
V
2.5
35
pF
Continental Device India Limited
Data Sheet
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