2N6730 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – SI PNP POWER BJT

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIALTRANSISTORS
2N6730
TO-237
Plastic Package
General Purpose Medium Power Amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC)
DESCRIPTION
SYMBOL
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Total Power Dissipation
Operating And Storage Junction
Temperature Range
V_CBO
V_CEO
V_EBO
I_C
P_D
T_j, T_stg
VALUE
100
100
5
1.5
850
-55 to +150
UNIT
V
V
V
A
mW
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
I_CBO V_CB=80V,I_E=0
I_EBO V_EB=4V, I_C=0
h_FE I_C=50mA,V_CE=1V
I_C=250mA,V_CE=1V
I_C=500mA,V_CE=1V
Collector Emitter Saturation Voltage
Transition Frequency
V_CE(Sat) I_C=250mA,I_B=25mA
f_T
V_CE=10V, I_C=50mA,
MIN
MAX UNIT
100
nA
100
nA
80
50
250
20
0.35
V
50
MHz
Continental Device India Limited
Data Sheet
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