2N6729 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
2N6729
TO-237
Plastic Package
General Purpose Medium Power Amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC)
DESCRIPTION
SYMBOL
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Total Power Dissipation
Operating And Storage Junction
Temperature Range
V_CBO
V_CEO
V_EBO
I_C
P_D
T_j, T_stg
VALUE
80
80
5
1.0
850
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector -Emitter Voltage
V_CEO I_C=10mA, I_B=0
80
Collector -Base Voltage
V_CBO I_C=100µA, I_E=0
80
Emitter -Base Voltage
V_EBO I_E=10µA, I_C=0
5
Collector Cut off Current
I_CBO V_CB=60V,I_E=0
Emitter Cut off Current
I_EBO V_EB=4V, I_C=0
DC Current Gain
h_FE I_C=50mA,V_CE=1V
80
I_C=250mA,V_CE=1V
50
I_C=500mA,V_CE=1V
20
Collector Emitter Saturation Voltage
V_CE(Sat) I_C=250mA,I_B=25mA
Transition Frequency
f_T
V_CE=10V, I_C=50mA,
50
UNIT
V
V
V
A
mW
ºC
MAX
0.1
0.1
250
UNIT
V
V
V
µA
µA
0.35
V
MHz
Continental Device India Limited
Data Sheet
Page 1 of 3