2N6719 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N6719
TO-237
Plastic Package
Designed for Applilcation as a Video Output to Drive Color CRT
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Power Dissipation @ Tc=25ºC
Operating and Storage Junction
Temperature Range
V_CBO
V_CEO
V_EBO
I_C
P_D
P_D
T_j, T_stg
300
300
7.0
0.5
1.0
2.0
-65 to +150
THERMAL RESISTANCE
Junction to ambient
Junction to case
R_th(j-a)
R_th(j-c)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
125
62.5
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
Collector Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
V_CEO I_C=1mA, I_B=0
300
V_CBO I_C=100µA, I_E=0
300
V_EBO I_E=1mA, I_C =0
7
I_CBO V_CB=200V, I_E=0
I_EBO V_EB=6V, I_C=0
h_FE I_C=1mA,V_CE=10V
25
I_C=10mA,V_CE=10V
40
I_C=30mA,V_CE=10V
40
Collector Emitter Saturation Voltage V_CE(sat) I_C=30mA,I_B=3mA
Base Emitter ( Sat) Voltage
V_{BE (sat)} I_C=20mA,I_B=2mA
Base Emitter (on) Voltage
V_{BE (on)} I_C =30mA, V_CE=10V
DYNAMICS CHARACTERISTICS
Current Gain Bandwidth Product
Collector Base Capacitance
Small Signal Current Gain
Continental Device India Limited
f_T
V_CE=10V, I_C=15mA,
30
C_cb V_CB=20V, I_C=0, f=1MHz
l hfe l I_C=15mA, V_CE=100V,
2.5
f=20MHz
Data Sheet
UNIT
V
V
V
A
W
W
ºC
ºC/W
ºC/W
MAX
100
100
UNIT
V
V
V
nΑ
nΑ
200
0.75
V
1.0
V
0.85
V
300
MHz
3.5
pF
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