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2N6718 Datasheet, PDF (1/3 Pages) Unisonic Technologies – NPN GENERAL PLANAR TRANSISTOR
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
2N6718
TO-237
Plastic Package
General Purpose Medium Power Amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Total Power Dissipation
Operating And Storage Junction
Temperature Range
VCBO
VCEO
VEBO
IC
PD
Tj, Tstg
VALUE
100
100
5
1.5
850
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Cut off Current
ICBO VCB=80V, IE=0
Emitter Cut off Current
IEBO VEB=4V, IC=0
DC Current Gain
hFE IC=50mA,VCE=1V
80
IC=250mA,VCE=1V
50
IC=500mA,VCE=1V
20
Collector Emitter Saturation Voltage
VCE(sat) IC=350mA,IB=35mA
Transition Frequency
fT
VCE=1V, IC=200mA,
50
UNIT
V
V
V
A
mW
ºC
MAX
0.1
0.1
250
0.35
500
UNIT
µA
µA
V
MHz
Continental Device India Limited
Data Sheet
Page 1 of 3