2N6717 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – SI NPN POWER BJT

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N6717
TO-237
Plastic Package
Designed for General Purpose Medium Power Amplifier and Switching Circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Operating and Storage Junction
Temperature Range
V_CBO
V_CEO
V_EBO
I_C
P_D
T_j, T_stg
80
80
5.0
1.5
850
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
MAX
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
I_CBO V_CB=60V, I_E=0
I_EBO V_EB=4V, I_C=0
h_FE I_C=50mA,V_CE=1V
80
I_C=250mA,V_CE=1V
50
I_C=500mA,V_CE=1V
20
Collector Emitter (Sat) Voltage
V_CE(sat) I_C=250mA,I_B=25mA
DYNAMICS CHARACTERISTICS
100
100
250
0.35
Current Gain Bandwidth Product
f_T
V_CE=1V, I_C=200mA,
50
500
UNIT
V
V
V
A
mW
ºC
UNIT
nΑ
nΑ
V
MHz
Continental Device India Limited
Data Sheet
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