2N6709 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
2N6709
TO-237
Plastic Package
General Purpose Medium Power Amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Total Power Dissipation
Operating And Storage Junction
V_CBO
V_CEO
V_EBO
I_C
P_D
T_j, T_stg
Temperature Range
VALUE
80
60
5
1.5
850
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter Voltage
V_CEO I_C=10mA, I_B=0
60
Collector Base Voltage
V_CBO I_C=100µA, I_E=0
80
Emitter-Base Voltage
V_EBO I_E=10µA, I_C=0
5
Collector Cut off Current
I_CBO V_CB=80V, I_E=0
Emitter Cut off Current
I_EBO V_EB=4V, I_C=0
DC Current Gain
h_FE I_C=50mA,V_CE=2V
40
I_C=250mA,V_CE=2V
40
I_C=500mA,V_CE=2V
25
Collector Emitter Saturation Voltage
V_CE(sat) I_C=500mA,I_B=50mA
I_C=1A,I_B=100mA
Transition Frequency
f_T
V_CE=10V, I_C=50mA,
50
UNIT
V
V
V
A
mW
ºC
MAX
0.1
0.1
250
0.5
1
UNIT
V
V
V
µA
µA
V
V
MHz
Continental Device India Limited
Data Sheet
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