2N6430 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – COMPLEMENTART SILICON TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON TRANSISTORS
2N6430, 6431
TO-18
Metal Can Package
General Purpose Transistors.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CEO
Collector Base Voltage
V_CBO
Emitter Base Voltage
V_EBO
Collector Current Continuous
I_C
Total Device Dissipation @Ta=25ºC
P_D
Derate Above 25ºC
Total Device Dissipation @ Tc=25ºC
P_D
Derate Above 25ºC
Operating and Storage Junction
T_j, T_stg
Temperature Range
2N6430
2N6431
200
300
200
300
6
50
500
2.86
1.8
10.3
-65 to +200
UNIT
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage
BV_CEO* I_C=1.0mA,I_B=0
2N6430
2N6431
VALUE
MIN TYP
MAX
UNIT
200
V
300
V
Collector Base Breakdown Voltage
BV_CBO I_C=100µA.I_E=0
2N6430
200
2N6431
300
Emitter Base Breakdown Voltage
BV_EBO I_E=100µA, I_C=0
6.0
Collector Cut off Current
2N6430 I_CBO V_CB=160V, I_E=0
2N6431
V_CB=200V, I_E=0
Emitter Cut off Current
I_EBO V_EB=4V, I_C=0
V
V
V
100
nA
100
nA
100
nA
DC Current Gain
h_FE I_C=1mA,V_CE=10V
25
I_C=10mA,V_CE=10V
40
I_C=30mA,V_CE=10V
50
Continental Device India Limited
Data Sheet
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