2N6387 Datasheet, PDF (1/4 Pages) ON Semiconductor – DARLINGTON NPN SILICON POWER TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS
2N6387
2N6388
TO-220
Plastic Package
Designed for General Purpose Amplifier and Low Speed Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Base Current
Power Dissipation upto T_c=25ºC
Derate above 25ºC
Power Dissipation upto T_a=25ºC
Derate above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
P_D
P_D
T_j, T_stg
2N6387
60
60
5.0
10
15
250
65
0.52
2.0
16
2N6388
80
80
- 65 to +150
UNIT
V
V
V
A
A
mA
W
W/ºC
W
mW/ºC
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
R_{th (j-c)}
R_{th (j-a)}
1.92
62.5
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T_C=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
2N6387
MIN
MAX
2N6388
MIN MAX
Collector Emitter (sus) Voltage *V_CEO(sus)
I_C=200mA, I_B=0
60
Collector Cut Off Current
I_CEO
V_CE=60V, I_B=0
1.0
V_CE=80V, I_B=0
Collector Cut Off Current
I_CEX
V_CE=60V, V_EB(Off)=1.5V
300
V_CE=80V, V_EB(Off)=1.5V
V_CE=60V, V_EB(Off)=1.5V,
T_C=125ºC
3.0
80
1.0
300
V_CE=80V, V_EB(Off)=1.5V,
T_C=125ºC
3.0
Emitter Cut Off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
Collector Emitter Saturation
Voltage
Base Emitter on Voltage
*h_FE
*V_{CE (sat)}
*V_{BE (on)}
I_C=5A,V_CE=3V
I_C=10A, V_CE=3V
I_C=5A, I_B=0.01A
I_C=10A, I_B=0.1A
I_C=5A,V_CE=3V
I_C=10A,V_CE=3V
*Pulse Test : Pulse width <300µs, Duty Cycle <2%
2N6387_2N6388Rev 310505E
<5.0
1000 - 20,000
>100
<2.0
<3.0
<2.8
<4.5
UNIT
V
mA
mA
µA
µA
mA
mA
mA
V
V
V
Continental Device India Limited
Data Sheet
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