2N5770 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN RF Transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
2N5770
TO-92
Plastic Package
EBC
VHF/UHF Amplifier Mixer and Oscillator Applications
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CEO
Collector Base Voltage
V_CBO
Emitter Base Voltage
V_EBO
Collector Current Continuous
I_C
Power Dissipation@ T_a=25ºC
P_D
Derate Above 25ºC
Power Dissipation@ T_c=25ºC
P_D
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
T_j, T_stg
VALUE
15
30
4.5
50
350
2.8
850
6.8
- 55 to +150
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Emitter Voltage
V_CEO
I_C=3mA, I_B=0
15
Collector Base Voltage
V_CBO
I_C=10µA, I_E=0
30
Emitter Base Voltage
V_EBO
I_E=10µA, I_C=0
4.5
Collector Cut Off Current
I_CBO
V_CB=15V, I_E = 0
Collector Emitter Saturation Voltage
V_CE(sat)
I_C=10mA, I_B=1mA
Base Emitter Saturation Voltage
V_BE(sat)
I_C=10mA, I_B=1mA
DC Current Gain
h_FE
I_C=3mA, V_CE=1V
20
I_C=8mA, V_CE=10V
50
DYNAMIC CHARACTERISTICS
Output Capacitance
Noise Figure
Transition Frequency
C_ob
I_E=0, V_CB=10V, f=140KHz
0.7
NF
V_CE =6V, I_C=1mA,R_s=400Ω,
f=60MHz
f_T
I_C=8mA, V_CE=10V,f=100MHz
700
UNITS
V
V
V
mA
mW
mW/ ºC
mW
mW/ ºC
ºC
MAX
10
0.4
1.0
UNITS
V
V
V
nA
V
V
200
1.1
6.0
1800
pF
dB
MHz
Continental Device India Limited
Data Sheet
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