2N5320 Datasheet, PDF (1/4 Pages) STMicroelectronics – SMALL SIGNAL NPN TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON POWER SWITCHING TRANSISTORS
2N5320, 2N5321 NPN
2N5322, 2N5323 PNP
TO-39
Metal Can Package
Medium Power Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Base Current
Power Dissipation@ T_a=25ºC
Derate Above 25ºC
Power Dissipation@ T_c=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
P_D
T_j, T_stg
2N5320
75
100
7
2N5321
2N5322
50
75
75
100
5
7
2.0
1.0
1
5.71
10
57.14
- 65 to +200
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
R_{th (j-a)}
R_{th (j-c)}
175
17.5
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Emitter Voltage
V_CEO
I_C=100mA, I_B=0
2N5320/5322
75
2N5321/5323
50
Collector Cut Off Current
I_CEX V_CE=70V, V_BE=1.5V, T_c=150ºC
2N5320/5322
V_CE=45V, V_BE=1.5V, T_c=150ºC
2N5321/5323
V_CE=100V, V_BE=1.5V
2N5320/5322
Emitter Cut Off Current
V_CE=75V, V_BE=1.5V
2N5321/5323
I_EBO
V_BE=5V, I_C=0
2N5321/5323
V_BE=7V, I_C=0
2N5320/5322
2N5323
50
75
5
UNITS
V
V
V
A
A
W
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
MAX
5
UNITS
V
V
mA
5
mA
100
µA
100
µA
100
µA
100
µA
Continental Device India Limited
Data Sheet
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