2N5232 Datasheet, PDF (1/4 Pages) Micro Electronics – NPN SILICON TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N5232
2N5232A
TO-92
Plastic Package
ABSOLUTE MAXIMUM RATINGS(T_a=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ T_a=25ºC
Storage Temperature
Junction Temperature
Lead Soldering, 1/16" + 1/32" from
Case for 10 seconds maximum
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
P_T ⁽¹⁾
T_stg
T_j
T_L
VALUE
50
70
5
100
360
- 55 to +150
+125
+260
ABSOLUTE MAXIMUM RATINGS(T_a=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
SYMBOL
BV_CEO**
BV_CBO
BV_EBO
I_CBO
TEST CONDITION
I_C=10mA, I_B=0
I_C=10µA, I_E=0
I_E=10µA, I_C=0
V_CB=50V, I_E = 0
MIN TYP
50
70
5
MAX
30
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter On Voltage
DC Current Gain
I_CES
I_EBO
V_CE(sat) ⁽²⁾
V_BE(sat) ⁽²⁾
V_BE(on)
h_FE
T_a= 100ºC
V_CB=50V, I_E = 0
V_CE=50V, V_BE = 0
V_EB=5V, I_C = 0
I_C=10mA, I_B=1mA
I_C=10mA, I_B=1mA
V_CE=10V, I_C=2mA
V_CE=5V, I_C=0.1mA
V_CE=5V, I_C=2mA
10
30
50
0.125
0.780
0.5
170 ⁽³⁾
250
0.900
500
(1) Derate by 3.6mW/ºC in case of increase in ambient temperature above 25ºC
(2) Pulse conditions: 300µs duration, 2% duty cycle.
(3)Typically, a minimum of 95% of the distribution is above this value.
UNITS
V
V
V
mA
mW
ºC
ºC
ºC
UNITS
V
V
V
nA
µA
nA
nA
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4